NPFC - MIL-S-19500/156
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N939B-1, 1N940B-1, 1N935BUR-1, 1N938BUR-1, 1N939BUR-1, 1N940BUR-1, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 23 November 1992 |
| Status: | inactive |
| Page Count: | 10 |
scope:
This specification covers the detail requirements for 9.00 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (DO-7 and DO-35) and figure 2 (DO-213AA).
Unless otherwise specified, TA = +25°C.
Primary electrical characteristics at TA = +25°C unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
January 19, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance...
January 16, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance (JAN,...
January 17, 2017
Semiconductor Device, Diode, Silicon, Low Level Voltage- Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, and 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, and 1N940BUR-1, JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only) Types JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
A description is not available for this item.
March 13, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
March 18, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
April 12, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H
A description is not available for this item.
July 20, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N935B-1, 1N937B-1,1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Five levels of product assurance are provided for each...
November 25, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N9398, 1N940B, AND 1N935B-1, 1N937B-1, 1N9388-1, 1N939B-1, ANO 1N94OB-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the detail requirements for 9.0 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
MIL-S-19500/156
November 23, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N939B-1, 1N940B-1, 1N935BUR-1, 1N938BUR-1, 1N939BUR-1, 1N940BUR-1, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 9.00 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in...
August 25, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, 1N940BUR-1, JANTX, JANTXV, AND JANS
A description is not available for this item.
October 7, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, 1N940B-1, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
January 25, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, lN940B, TX AND TXV
A description is not available for this item.
October 10, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX AND TXV
A description is not available for this item.
November 24, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX AND TXV
A description is not available for this item.
February 1, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX1N935B, TX1N937B, TX1N938B, TX1N939B, AND TX1N940B
A description is not available for this item.
August 19, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE TYPES 1N935B, 1N937B, 1N938B, AND 1N940B TX AND NON-TX
A description is not available for this item.
May 6, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B TX AND NON-TX
A description is not available for this item.
June 2, 1967
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX1N935B, TX1N937B, TX1N938B, TX1N939B, AND TX1N940B
A description is not available for this item.
November 18, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B AND 1N939B
A description is not available for this item.
July 29, 1964
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B AND 1N939B
A description is not available for this item.
October 21, 1963
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B AND 1N939B
A description is not available for this item.
October 30, 1962
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B, AND 1N939B
A description is not available for this item.