DLA - SMD-5962-93225
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 8 April 1994 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN shall be as shown in the following example:
Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
Device type Generic number 1/ Circuit function Access time 01 (See 6.6) 64K × 4 CMOS SRAM with [O bar][E bar] 45 ns 02 (See 6.6) 64K × 4 CMOS SRAM with [O bar][E bar] 35 ns 03 (See 6.6) 64K × 4 CMOS SRAM with [O bar][E bar] 25 ns 04 (See 6.6) 64K × 4 CMOS SRAM with [O bar][E bar] 20 ns
The device class designator shall be a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 dual-in-line Y CQCC4-N28 28 rectangular leadless chip carrier Z GDFP2-F28 28 flat pack
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Voltage on any input relative to VSS range - - - - −0.5 V dc to +7.0 V dc Voltage applied to outputs range- - - - - - - - - - −0.5 V dc to +6.0 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD)- - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (ΘJC) - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - +150°C 3/
Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage range (VSS - - - - - - - - - - - - - 0 V dc Input high voltage range (VIH) - - - - - - - - - - 2.2 V dc to VCC +0.5 V dc Input low voltage range (VIL) - - - - - - - - - - - −0.5 V dc to + 0.8 V dc 4/ Case operating temperature range (TC) - - - - - - - −55°C to +125°C
Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . 5/ percent
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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