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DLA - SMD-5962-90958

MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 July 1995
Status: inactive
Page Count: 14
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 TLE2161M JFET-input high output-drive, low power operational amplifier

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Positive supply voltage (+VCC) . . . . . . . . . . . . +19 V 2/ Negative supply voltage (−VCC) . . . . . . . . . . . . −19 V 2/ Differential input voltage . . . . . . . . . . . . . . ±38 V 3/ Input voltage range (VIN) (any input) . . . . . . . . . ±VCC Input current (IIN) (each input) . . . . . . . . . . . ±1 mA Output current (IOUT) . . . . . . . . . . . . . . . . . ±80 mA Total current into +VCC terminal . . . . . . . . . . . 80 mA Total current into −VCC terminal . . . . . . . . . . . 80 mA Duration of short circuit current at (or below) 25°C . Unlimited 4/ Power dissipation (TA ≤ 25°C): Case P . . . . . . . . . . . . . . . . . . . . . . . 1050 mW 5/ Case 2 . . . . . . . . . . . . . . . . . . . . . . . 1375 mW 5/ Junction temperature (TJ) . . . . . . . . . . . . . . . +150°C Storage temperature range . . . . . . . . . . . . . . . −65°C to 150°C Case temperature for 60 seconds: (case 2) . . . . . . 260°C Lead temperature 1.6 mm (1/16 inch) from case for 60 seconds: (case P) . . . . . . . . . . . . . . 300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . See MIL-STD-1835

Supply voltage (±VCC) . . . . . . . . . . . . . . . . . ±3.5 V minimum, ±18 V maximum Common-mode input voltage (VIC): ±VCC = ±5 V . . . . . . . . . . . . . . . . . . . . −1.6 V minimum, 4 V maximum ±VCC = ±15 V . . . . . . . . . . . . . . . . . . . . −11 V minimum, 13 V maximum Ambient operating free-air temperature (TA) . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

October 16, 2018
MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
August 22, 2013
MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
February 21, 2003
MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
October 30, 1996
MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-90958
July 5, 1995
MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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