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DLA - SMD-5962-86842 REV C

MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 January 1998
Status: inactive
Page Count: 10
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54ALS08 Quadruple two-input positive AND gate

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat package 2 CQCC1-N20 20 Square chip carrier

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage range (VCC) -------------------------------------- −0.5 V dc minimum to 7.0 V dc maximum Input voltage range (VI) ---------------------------------------- −1.5 V dc at −18 mA to 7.0 V dc Storage temperature range ------------------------------------ −65°C to +150°C Maximum power dissipation (PD) per device 1/ -------------------- 22 mW Lead temperature (soldering, 10 seconds) ------------------------ +300°C Thermal resistance, junction-to-case (ΘJC) ---------------------- See MIL-STD 1835 Junction temperature (TJ) --------------------------------------- 175°C Operating free-air temperature range ---------------------------- −55°C to +125°C

Supply voltage range (VCC)............... +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH).......... +2.0 V Maximum low level input voltage (VIL) TC = +125°C.................... 0.7 V dc TC = −55°C.................... 0.8 V dc TC = +25°C.................... 0.8 V dc Case operating temperature range (TC).......... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

August 14, 2023
MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTLY TTL, AND GATE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class level consisting of high reliability (device classes Q and M) space application (device class V). A choice of case outlines and lead...
July 23, 2018
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 27, 2013
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 2, 2006
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 20, 2006
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
SMD-5962-86842 REV C
January 22, 1998
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
May 11, 1992
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 4, 1988
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
A description is not available for this item.
August 19, 1987
MICROCIRCUIT, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, AND GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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