DLA - SMD-5962-82009 REV J
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 12 May 1997 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Access time 01 (See 6.6) 8192 words × 8 bits per word PROM 100 ns with a third high impedance state output 02 (See 6.6) 8192 words × 8 bits per word PROM 55 ns with a third high impedance state output 03 (See 6.6) 8192 words × 8 bits per word PROM 45 ns with a third high impedance state output
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 flat package L GDIP3-T24 or CDIP4-T24 24 Dual-in-line Z CQCC1-N32 32 Rectangular leadless chip carrier X CDFP4-F24 24 flat package 3 CQCC1-N28 28 square chip carrier
Supply voltage range ....................
Supply voltage range (VCC) ....................
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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