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DLA - SMD-5962-82009 REV H

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 15 May 1992
Status: inactive
Page Count: 24
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 8192 words × 8 bits per word PROM 100 ns with a third high impedance state output 02 (See 6.6) 8192 words × 8 bits per word PROM 55 ns with a third high impedance state output 03 (See 6.6) 8192 words × 8 bits per word PROM 45 ns with a third high impedance state output

The case outline(s) shall identify the circuit function as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package Z C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package X F-6A (24-lead, .640" × .420" × .115"), flat package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range- - - - - - - - - - - - - - - - −0.3 V dc to +7.0 V dc Input voltage - - - - - - - - - - - - - - - - - - - 5.5 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - +300°C Thermal resistance, junction-to-case (ΘJC):1/ 2/ Cases J, K, L, Z, X, and 3 - - - - - - - - - - - See MIL-M-38510, appendix C Output voltage applied - - - - - - - - - - - - - - −0.3 V dc to +VCC Output sink current - - - - - - - - - - - - - - - - 100 mA Maximum power dissipation (PD) 1/- - - - - - - - - 1.04 W Maximum junction temperature (TJ) - - - - - - - - - +175°C

Supply voltage range (VCC)- - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - - - 0.8 V dc Normalized fanout (each output) - - - - - - - - - - 12 mA Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 18, 2018
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 31, 2011
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 29, 2005
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 12, 1997
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN shall be as shown in the...
SMD-5962-82009 REV H
May 15, 1992
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 14, 1988
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
December 7, 1987
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
August 5, 1987
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
October 24, 1986
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
October 31, 1985
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
May 3, 1985
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 18, 1983
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
September 1, 1982
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64K (8K X 8) PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.

References

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