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DLA - SMD-5962-88683 REV A

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 25 August 1997
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function Acess time 01 (See 6.4) 8192 × 9 CMOS static RAM 45 NS 02 (See 6.4) 8192 × 9 CMOS static RAM 35 NS 03 (See 6.4) 8192 × 9 CMOS static RAM 25 NS 04 (See 6.4) 8192 × 9 CMOS static RAM 45 NS 05 (See 6.4) 8192 × 9 CMOS static RAM 35 NS 06 (See 6.4) 8192 × 9 CMOS static RAM 25 NS

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style U CQCC3-N28 28 rectangular chip carrier package X GDIP1-T28 or CDIP2-T28 28 dual-in-line package Y See figure 1 28 dual-in-line package Z GDFP2-F28 28 flat package

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage to ground potential ---------------- −0.5 V dc to +7.0 V dc DC voltage applied to outputs --------------------- −0.5 V dc to +7.0 V dc DC input voltage ---------------------------------- −0.5 V dc to VCC + 0.5 V dc DC output current --------------------------------- 20 mA Storage temperature range ------------------------- −65°C to +150°C Maximum power dissipation (PD) -------------------- 1.0 W Lead temperature (soldering, 10 seconds) ---------- +300°C Thermal resistance, junction-to-case (ΘC): Cases U, X, and Z --------------------------------- See MIL-STD-1835 Case Y -------------------------------------------- 28°C/W 1/ Junction temperature (TJ) 2/ ---------------------- +150°C

Supply voltage (VCC) ------------------------------ 4.5 V dc to 5.5 V dc High level input voltage (VIH) -------------------- 2.2 V dc to VCC + 0.5 V dc Low level input voltage (VIL) 3/ ------------------ −1.0 V dc to +0.8 V dc Case operating temperature range (TC) ------------- −55°C to + 125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

July 14, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 1, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 10, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. .
SMD-5962-88683 REV A
August 25, 1997
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
March 7, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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