DLA - SMD-5962-89694 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 16 October 1998 |
| Status: | inactive |
| Page Count: | 12 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
The complete PIN is as shown in the following example:
The device type(s) identify the circuit function as follows:
Device type Generic number Circuit function Access time 01 7C190 16 × 4 SRAM 25 ns 02 25402 16 × 4 SRAM 30 ns
The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package F GDFP2-F16 or CDFP3-F16 16 Flat package X CQCC2-N20 20 Square chip carrier package
The lead finish is as specified in MIL-PRF-38535, appendix A.
Supply voltage to ground potential −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state −0.5 V dc to +7.0 V dc DC input voltage −3.0 V dc to +7.0 V dc DC output current 20 mA Maximum power dissipation 1/ 500 mW Lead temperature (soldering, 10 seconds) +260°C Thermal resistance, junction-to-case (θJC): See MIL-STD-1835 Junction temperature (TJ) 2/ +150°C Storage temperature range −65°C to +150°C Temperature under bias −55°C to +125°C
Supply voltage (VCC) +4.5 V dc to +5.5 V dc Ground voltage (GND) 0 V dc Input high voltage (VIH) 2.0 V dc minimum Input low voltage (VIL) 0.8 V dc maximum Operating case temperature range (TC) −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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