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DLA - SMD-5962-89694 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 October 1998
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 7C190 16 × 4 SRAM 25 ns 02 25402 16 × 4 SRAM 30 ns

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package F GDFP2-F16 or CDFP3-F16 16 Flat package X CQCC2-N20 20 Square chip carrier package

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage to ground potential −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state −0.5 V dc to +7.0 V dc DC input voltage −3.0 V dc to +7.0 V dc DC output current 20 mA Maximum power dissipation 1/ 500 mW Lead temperature (soldering, 10 seconds) +260°C Thermal resistance, junction-to-case (θJC): See MIL-STD-1835 Junction temperature (TJ) 2/ +150°C Storage temperature range −65°C to +150°C Temperature under bias −55°C to +125°C

Supply voltage (VCC) +4.5 V dc to +5.5 V dc Ground voltage (GND) 0 V dc Input high voltage (VIH) 2.0 V dc minimum Input low voltage (VIL) 0.8 V dc maximum Operating case temperature range (TC) −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

June 1, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
October 22, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 19, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89694 REV A
October 16, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
August 10, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."...

References

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