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DLA - SMD-5962-89694

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 August 1989
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 7C190 16 × 4 SRAM 25 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package F F-5 (16-lead, .440" × .285" × .085"), flat package X C-2A (20-terminal, .358" × .358" × .075"), square chip carrier package

Supply voltage to ground potential - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - 20 mA Maximum power dissipation 1/ - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (θJC): - - - see MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

June 1, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
October 22, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 19, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 16, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
SMD-5962-89694
August 10, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."...

References

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