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DLA - SMD-5962-88665 REV D

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 9 December 1996
Status: inactive
Page Count: 27
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device Type Generic number 1/ Circuit function Access time 01,07 2K × 16 dual port CMOS SRAM (master) 90 ns 02,08 2K × 16 dual port CMOS SRAM (slave) 90 ns 03,09 2K × 16 dual port CMOS SRAM (master) 70 ns 04,10 2K × 16 dual port CMOS SRAM (slave) 70 ns 05,11 2K × 16 dual port CMOS SRAM (master) 55 ns 06,12 2K × 16 dual port CMOS SRAM (slave) 55 ns 13 2K × 16 dual port CMOS SRAM (master) 45 ns 14 2K × 16 dual port CMOS SRAM (slave) 45 ns 15 2K × 16 dual port CMOS SRAM (master) 35 ns 16 2K × 16 dual port CMOS SRAM (slave) 35 ns

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 68 dual-in-line Y CQCC1-N68 68 square leadless chip carrier Z CMGA3-PN 68 pin grid array 2/ U See figure 1 68 flat pack

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage range ................................ −0.5 V dc to +7.0 V dc Input voltage ....................................... −0.5 V dc to +6.0 V dc DC output current.................................... 50 mA Storage temperature range ........................... −65°C to +150°C Maximum power dissipation (PD)....................... 2.0 W Lead temperature (soldering, 10 seconds) ............ +260°C Thermal resistance, junction-to-case (ΘJC): Case X ............................................. 37°C/W Cases Y and Z ...................................... See MIL-STD-1835 Case U ............................................. 6°C/W Junction temperature (TJ) ........................... +150°C 3/

Supply voltage range (VCC) ........................ 4.5 V dc to 5.5 V dc High level input voltage range (VIH) .............. 2.2 V dc to 6.0 V dc Low level input voltage range (VIL) ............... −0.5 V dc to +0.8 V dc 4/ Case operating temperature range (TC) ............. −55°C to + 125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

March 20, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 25, 2016
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 22, 2007
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88665 REV D
December 9, 1996
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
September 10, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 23, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
November 8, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1988
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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