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DLA - SMD-5962-88665 REV C

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 September 1993
Status: inactive
Page Count: 25
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01, 07 2K × 16 dual port CMOS SRAM (master) 90 ns 02, 08 2K × 16 dual port CMOS SRAM (slave) 90 ns 03, 09 2K × 16 dual port CMOS SRAM (master) 70 ns 04, 10 2K × 16 dual port CMOS SRAM (slave) 70 ns 05, 11 2K × 16 dual port CMOS SRAM (master) 55 ns 06, 12 2K × 16 dual port CMOS SRAM (slave) 55 ns 13 2K × 16 dual port CMOS SRAM (master) 45 ns 14 2K × 16 dual port CMOS SRAM (slave) 45 ns 15 2K × 16 dual port CMOS SRAM (master) 35 ns 16 2K × 16 dual port CMOS SRAM (slave) 35 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 68 dual-in-line Y CQCC1-N68 68 square leadless chip carrier Z CMGA3-PN 68 pin grid array 2/

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage- - - - - - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC output current- - - - - - - - - - - - - - - - - - 50 mA Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 2.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - 37°C/W Cases Y and Z - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - +150°C 3/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - 2.2 V dc to 6.0 V dc Low level input voltage range (VIL) - - - - - - - - −0.5 V dc to +0.8 V dc 4/ Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 20, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 25, 2016
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 22, 2007
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 9, 1996
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
SMD-5962-88665 REV C
September 10, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 23, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
November 8, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1988
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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