NPFC - MIL-PRF-19500/158
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
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| Organization: | NPFC |
| Publication Date: | 18 September 2003 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
March 8, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1 THROUGH 1N3157-1 LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
January 18, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1 THROUGH 1N3157-1 LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N3154-1, through 1N3157-1, and 1N3154UR-1 through 1N3157UR-1, JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only) JANTXVM, D, L, R, F, G, H, and JANSM, D, L, R, F, G, H
A description is not available for this item.
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
April 2, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltagereference, temperature compensated diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
MIL-PRF-19500/158
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
February 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154-1,through 1N3157-1, AND lN3154UR-1, through 1N3157UR-1 JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
A description is not available for this item.
November 19, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154-1 .through lN3157-1, AND 1N3154UR-1, through lN3157UR-1 JAN, JANTX, JANTXV, JANJ. AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D. L, R. F, G. H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Five levels of product assurance are provided for each encapsulated device type as...
July 1, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154,1N3155,1N3156, 1N3157, AND 1N31541, 1N3155-1, 1N3156-1, 1N3157-1, AND 1N3154UR-1, 1N3156UR-1, 1N3157UR-1 JAN, JANTX, JANTXV, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ± 5 percent, silicon, voltage reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
November 25, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1153155, 1N3156, 113157, AND 1N3154-1, 113155-1, 1N3156-1, 1N3157-1, AND 1N3154UR-1, 1N3155UR-1, 1N3156UR-1, 1N315NR-1 JAN, JANTX, JANTXV, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXW, DI L, RI F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the detail requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
December 9, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, 1N3154-1, 1N3155-1, 1N3156-1, 1N3157-1, 1N3154UR-1, 1N3155UR-1, 1N3156UR-1, 1N3157UR-1, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 8.40 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in...
August 14, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, lN3155, 1N3156, 1N3157, 1N3154-1, 1N3155-1, 1N3156-1, 1N3157-1, AND 1N3154UR-1, lN3155VR-1, lN3156UR-1, lN3157UR-1 JANTX, JANTXV, AND JANS
A description is not available for this item.
December 2, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N3154 THROUGH 1N3157,-1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 15, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
March 22, 1977
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
October 11, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
October 16, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
March 17, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154 THROUGH 1N3157 TX AND NON-TX
A description is not available for this item.
May 6, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE TYPES 1N3154 through 1N3157 TX and non-TX
A description is not available for this item.
June 2, 1967
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154 THROUGH 1N3157 AND TX1N3154 THROUGH TX1N3157
A description is not available for this item.
December 17, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N3154 THROUGH 1N3157
A description is not available for this item.
March 3, 1965
SEMICONDUCTOR DEVICE, DIODES, TYPES IN3154, IN3155, IN3156, AND IN3157
A description is not available for this item.
August 7, 1964
SEMICONDUCTOR DEVICE, DIODES, TYPES 1N3154, 1N3155, 1N3156, AND 1N3157
A description is not available for this item.