NPFC - MIL-S-19500/158
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, 1N3154-1, 1N3155-1, 1N3156-1, 1N3157-1, 1N3154UR-1, 1N3155UR-1, 1N3156UR-1, 1N3157UR-1, JANTX, JANTXV, AND JANS
inactive
Buy Now
| Organization: | NPFC |
| Publication Date: | 9 December 1992 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the detail requirements for 8.40 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (DO-7 and DO-35) and figure 2 (DO-213AA).
Unless otherwise specified TA = +25°C.
Primary electrical characteristics at TA = +25°C unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
March 8, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1 THROUGH 1N3157-1 LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
January 18, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1 THROUGH 1N3157-1 LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N3154-1, through 1N3157-1, and 1N3154UR-1 through 1N3157UR-1, JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only) JANTXVM, D, L, R, F, G, H, and JANSM, D, L, R, F, G, H
A description is not available for this item.
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
April 2, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltagereference, temperature compensated diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
February 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154-1,through 1N3157-1, AND lN3154UR-1, through 1N3157UR-1 JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
A description is not available for this item.
November 19, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154-1 .through lN3157-1, AND 1N3154UR-1, through lN3157UR-1 JAN, JANTX, JANTXV, JANJ. AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D. L, R. F, G. H
This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Five levels of product assurance are provided for each encapsulated device type as...
July 1, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154,1N3155,1N3156, 1N3157, AND 1N31541, 1N3155-1, 1N3156-1, 1N3157-1, AND 1N3154UR-1, 1N3156UR-1, 1N3157UR-1 JAN, JANTX, JANTXV, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 8.4 volts ± 5 percent, silicon, voltage reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
November 25, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1153155, 1N3156, 113157, AND 1N3154-1, 113155-1, 1N3156-1, 1N3157-1, AND 1N3154UR-1, 1N3155UR-1, 1N3156UR-1, 1N315NR-1 JAN, JANTX, JANTXV, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXW, DI L, RI F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the detail requirements for 8.4 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
MIL-S-19500/158
December 9, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, 1N3154-1, 1N3155-1, 1N3156-1, 1N3157-1, 1N3154UR-1, 1N3155UR-1, 1N3156UR-1, 1N3157UR-1, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 8.40 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in...
August 14, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, lN3155, 1N3156, 1N3157, 1N3154-1, 1N3155-1, 1N3156-1, 1N3157-1, AND 1N3154UR-1, lN3155VR-1, lN3156UR-1, lN3157UR-1 JANTX, JANTXV, AND JANS
A description is not available for this item.
December 2, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N3154 THROUGH 1N3157,-1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 15, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
March 22, 1977
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
October 11, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
October 16, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154, 1N3155, 1N3156, 1N3157, TX1N3154, TX1N3155, TX1N3156, AND TX1N3157
A description is not available for this item.
March 17, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154 THROUGH 1N3157 TX AND NON-TX
A description is not available for this item.
May 6, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE TYPES 1N3154 through 1N3157 TX and non-TX
A description is not available for this item.
June 2, 1967
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N3154 THROUGH 1N3157 AND TX1N3154 THROUGH TX1N3157
A description is not available for this item.
December 17, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N3154 THROUGH 1N3157
A description is not available for this item.
March 3, 1965
SEMICONDUCTOR DEVICE, DIODES, TYPES IN3154, IN3155, IN3156, AND IN3157
A description is not available for this item.
August 7, 1964
SEMICONDUCTOR DEVICE, DIODES, TYPES 1N3154, 1N3155, 1N3156, AND 1N3157
A description is not available for this item.