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DLA - SMD-5962-92132

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 27 October 1993
Status: inactive
Page Count: 31
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Access Device type Generic number Circuit function time Refresh 01 MT4C4067-10 64K × 4 bit DRAM 100 ns 256 cycles (4 ms) 02 MT4C4067-12 64K × 4 bit DRAM 120 ns 256 cycles (4 ms) 03 MT4C4067-15 64K × 4 bit DRAM 150 ns 256 cycles (4 ms)

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style V GDIP1-T18 18 Dual-in-line X See figure 1 18 Leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Voltage on any pin relative to VSS - - - - - - - - - - - - - - −1.5 V to +7.0 V Short-circuit output current - - - - - - - - - - - - - - - - - 50 mA Power dissipation (PD) - - - - - - - - - - - - - - - - - - - - 1.0 W Storage temperature range - - - - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 5 seconds) - - - - - - - - - - - +300°C Thermal resistance (0JC): Case V - - - - - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Case X - - - - - - - - - - - - - - - - - - - - - - - - - - - 50°C/W Junction temperature (TJ) - - - - - - - - - - - - - - - - - - +150°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Power supply and signal reference (VSS) - - - - - - - - - - - 0.0 V dc High level input voltage (VIH) - - - - - - - - - - - - - - - - 2.4 V dc to 6.5 V dc Low level input voltage (VIL) - - - - - - - - - - - - - - - - −1.0 V dc to +0.8 V dc Case operating temperature (TC) - - - - - - - - - - - - - - - −55°C to +125°C Refresh cycle time - - - - - - - - - - - - - - - - - - - - - - 4.0 ms

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . 2/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 12, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
July 21, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 28, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
November 5, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
September 6, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
SMD-5962-92132
October 27, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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