scope:

This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.4.

See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).

Maximum ratings are as shown in 5 and 10 of table III herein and as follows:

P_T = 500 mW (DO-7, DO-35) at T_L = 50°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I_z to 0.0 mA dc at +175°C).

P_T = 500 mW (D0-213AA) at T_EC = 125°C. (Derate to 0 at 175°C).

−65°C ≤ T_op ≤ + 175°C; −65°C ≤ T_STG ≤ + 175°C.

Primary electrical characteristic columns 2, 7, 8, and 9 of table III herein and as follows:

1.8 V dc ≤ V_z ≤ 100 V dc.

R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 m) (DO-7 and DO-35).

R_ΘJEC = 100°C/W (maximum) junction to endcaps (DO-213AA). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.