scope:

This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.

See figure 1 (DO-7 and DO-35), figure 2 (DO-2133AA), figure 3 (D-5D), and figure 4 (JANHC and JANKC).

Maximum ratings are as shown in columns 5, and 10 of table III herein and as follows:

P_T = 500 mW (DO-7, D0-35) at T_L = 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). (Derate I_Z to 0.0 mA dc at +175°C).

P_T = 500 mW (DO-213AA) at T_EC = 125°C. (Derate to 0 at 175°C).

−65°C ≤ T_op ≤ +175°C; −65°C ≤ T_STG ≤ +175°C.

Primary electrical characteristic columns 2, 7, 9, and 10 of table III herein and as follows:

1.8 V dc ≤ V_Z ≤ 100 V dc.

R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7 and DO-35)

R_ΘJEC = 100°C/W (maximum) junction to endcaps (DO-213AA and D-5D). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.