DLA - MIL-S-19500/606
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R
| Organization: | DLA |
| Publication Date: | 10 November 1992 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-S-19500
See figure 1, TO-204AA and TO-204AE.
TA = +25°C unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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