DLA - SMD-5962-90869
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 18 October 1991 |
| Status: | inactive |
| Page Count: | 43 |
Document History
November 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
A description is not available for this item.
January 22, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
SMD-5962-90869
October 18, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
A description is not available for this item.