DLA - SMD-5962-90869 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 6 August 1998 |
| Status: | inactive |
| Page Count: | 45 |
Document History
November 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-90869 REV B
August 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
A description is not available for this item.
January 22, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
October 18, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
A description is not available for this item.