DLA - SMD-5962-94567
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, X 9 CLOCKED FIFO'S, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 20 February 1996 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN shall be as shown in the following example:
Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
Device type Generic number 1/ Circuit function Access time 01 7C443 2K × 9 Clocked FIFO 30 ns 02 7C443 2K × 9 Clocked FIFO 20 ns 03 7C443 2K × 9 Clocked FIFO 14 ns 04 7C441 512 × 9 Clocked FIFO 30 ns 05 7C441 512 × 9 Clocked FIFO 20 ns 06 7C441 512 × 9 Clocked FIFO 14 ns
The device class designator shall be a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and Qualification to MIL-PRF-38535
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X GDIP4-T28 32 Dual-in-line Package Y CQCC1-N32 32 Rectangular leadless chip carrier
The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.
Supply voltage range to ground potential (VCC) - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to the outputs in the high Z state - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Maximum power dissipation - - - - - - - - - - - - - - - - 0.825 W Lead temperature (soldering, 10 seconds) - - - - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - - - 11°C/W Case Y - - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - - - - −55°C to +125°C
Supply voltage (VCC) - - - - - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - - - - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - - - - 2.2 V dc minimum Input Low voltage (VIL) - - - - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C
Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . 3/ percent
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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