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DLA - SMD-5962-94567

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, X 9 CLOCKED FIFO'S, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 February 1996
Status: inactive
Page Count: 23
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 7C443 2K × 9 Clocked FIFO 30 ns 02 7C443 2K × 9 Clocked FIFO 20 ns 03 7C443 2K × 9 Clocked FIFO 14 ns 04 7C441 512 × 9 Clocked FIFO 30 ns 05 7C441 512 × 9 Clocked FIFO 20 ns 06 7C441 512 × 9 Clocked FIFO 14 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and Qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP4-T28 32 Dual-in-line Package Y CQCC1-N32 32 Rectangular leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range to ground potential (VCC) - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to the outputs in the high Z state - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Maximum power dissipation - - - - - - - - - - - - - - - - 0.825 W Lead temperature (soldering, 10 seconds) - - - - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - - - 11°C/W Case Y - - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - - - - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - - - - 2.2 V dc minimum Input Low voltage (VIL) - - - - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . 3/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

August 22, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, X 9 CLOCKED FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
April 5, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, X 9 CLOCKED FIFO’S, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-94567
February 20, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, X 9 CLOCKED FIFO'S, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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