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DLA - SMD-5962-88681 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 19 August 1997
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 64K × 4 CMOS SRAM 35 ns 02 (See 6.6) 64K × 4 CMOS SRAM 45 ns 03 (See 6.6) 64K × 4 CMOS SRAM 55 ns 04 (See 6.6) 64K × 4 CMOS SRAM 70 ns 05 (See 6.6) 64K × 4 CMOS SRAM 25 ns 06 (See 6.6) 64K × 4 CMOS SRAM 20 ns

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style L GDIP3-T24 or CDIP4-T24 24 dual-in-line package X CQCC3-N28 28 rectangular chip carrier package Y CDFP4-28 28 flat package

The lead finish is as specified in MIL-PRF-38535, appendix A.

Voltage on any input relative to VSS range --------- −0.5 V dc to +7.0 V dc Voltage applied to outputs range -------------------- −0.5 V dc to +6.0 V dc Storage temperature range --------------------------- −65°C to + 150°C Maximum power dissipation (PD) --------------------- 1.0 W Lead temperature (soldering, 10 seconds) ------------ +260°C Thermal resistance, junction-to-case (ΘJC): Cases L and X -------------------------------------- See MIL-STD-1835 Junction temperature (TJ) -------------------------- +150°C 1/

Supply voltage range (VCC) ------------------------ 4.5 V dc to 5.5 V dc Supply voltage range (VSS) ------------------------- 0 V dc Input high voltage range (VIH) ---------------------- 22 V dc to VCC +0.5 V dc Input low voltage range (VIL) ----------------------- −0.5 V dc to + 0.8 V dc 2/ Case operating temperature range (TC) -------------- −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

March 30, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 9, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88681 REV C
August 19, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
October 29, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 28, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
A description is not available for this item.
July 27, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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