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DLA - SMD-5962-88681 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 October 1992
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 64K × 4 CMOS SRAM 35 ns 02 (See 6.6) 64K × 4 CMOS SRAM 45 ns 03 (See 6.6) 64K × 4 CMOS SRAM 56 ns 04 (See 6.6) 64K × 4 CMOS SRAM 70 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-11 (28-terminal, .560" × .358" × .120"), rectangular chip carrier package

Voltage on any input relative to VSS range - - - - - ×0.5 V dc to +7.0 V dc Voltage applied to outputs range - - - - - - - - - - −0.5 V dc to +6.0 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, Junction-to-case (θJC): Cases L and X - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage range (VSS) - - - - - - - - - - - - - - 0 V dc Input high voltage range (VIH) - - - - - - - - - - - - 2.2 V dC to VCC +0.5 V dc Input low voltage range (VIL) - - - - - - - - - - - - −0.5 V dc to + 0.8 V dc 2/ Case operating temperature-range (TC) - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 30, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 9, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 19, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
SMD-5962-88681 REV B
October 29, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 28, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
A description is not available for this item.
July 27, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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