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DLA - SMD-5962-90899

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 31 August 1992
Status: inactive
Page Count: 31
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V shall meet or exceed the electrical performance characteristics specified in table I herein after exposure to the specified irradiation levels specified in the absolute maximum ratings herein and the RHA marked devices shall be marked in accordance with MIL-I-38535. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time Endurance 01 28F010 (128 K × 8) CMOS flash EEPROM 250 ns 10000 cycles 02 28F010 (128 K × 8) CMOS flash EEPROM 200 ns 10000 cycles 03 28F010 (128 K × 8) CMOS flash EEPROM 150 ns 10000 cycles 04 28F010 (128 K × 8) CMOS flash EEPROM 120 ns 10000 cycles 05 28F010 (128 K × 8) CMOS flash EEPROM 250 ns 1000 cycles 06 28F010 (128 K × 8) CMOS flash EEPROM 200 ns 1000 cycles 07 28F010 (128 K × 8) CMOS flash EEPROM 150 ns 1000 cycles 08 28F010 (128 K × 8) CMOS flash EEPROM 120 ns 1000 cycles

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style T See figure 1 32 "J" lead chip carrier U See figure 1 32 Flat pack X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z See figure 1 32 Gullwing lead chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Endurance: Device types 01-04 . . . . . . . . . . . . . . . . . . . . . . . 10000 cycles/byte, minimum Device types 05-08 . . . . . . . . . . . . . . . . . . . . . . . 1000 cycles/byte, minimum Supply voltage range (VCC) 2/ . . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Storage temperature range (Tstg) . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . +300°C Junction temperature (TJ) 3/ . . . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (ΘJC) (case outline X, Y) . . See MIL-STD-1835 Thermal resistance, junction-to-case (ΘJC) (case outlines T, Z) . 13°C/W Thermal resistance, junction-to-case (ΘJC) (case outline U) . . . 27°C/W Voltage on any pin with respect to ground 2/ . . . . . . . . . . . −2.0 V dc to +7.0 V dc Voltage on pin A9 with respect to ground 4/ . . . . . . . . . . . −2.0 V dc to +13.5 V dc VPP supply voltage with respect to ground 4/ . . . . . . . . . . . −2.0 V dc to +14.0 V dc VCC supply voltage with respect to ground 2/ . . . . . . . . . . . −2.0 V dc to +7.0 V dc Output short circuit current 5/ . . . . . . . . . . . . . . . . . 200 mA Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years minimum

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Operating temperature range (Tcase) . . . . . . . . . . . . . . . −55°C to +125°C Low level input voltage range (VIL) . . . . . . . . . . . . . . . −0.5 V dc to +0.8 V dc High level input voltage range (VIH) . . . . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc High level input voltage range, CMOS (VIH) . . . . . . . . . . . . VCC −0.5 V dc to VCC +0.5 V dc Chip clear (VP) . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 V dc to 12.6 V dc

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . xx percent 7/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
July 27, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 21, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability. Microcircuits...
November 16, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
April 16, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
March 25, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90899
August 31, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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