DLA - SMD-5962-90899
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 31 August 1992 |
| Status: | inactive |
| Page Count: | 31 |
scope:
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.
The PIN shall be as shown in the following example:
Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V shall meet or exceed the electrical performance characteristics specified in table I herein after exposure to the specified irradiation levels specified in the absolute maximum ratings herein and the RHA marked devices shall be marked in accordance with MIL-I-38535. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Access time Endurance 01 28F010 (128 K × 8) CMOS flash EEPROM 250 ns 10000 cycles 02 28F010 (128 K × 8) CMOS flash EEPROM 200 ns 10000 cycles 03 28F010 (128 K × 8) CMOS flash EEPROM 150 ns 10000 cycles 04 28F010 (128 K × 8) CMOS flash EEPROM 120 ns 10000 cycles 05 28F010 (128 K × 8) CMOS flash EEPROM 250 ns 1000 cycles 06 28F010 (128 K × 8) CMOS flash EEPROM 200 ns 1000 cycles 07 28F010 (128 K × 8) CMOS flash EEPROM 150 ns 1000 cycles 08 28F010 (128 K × 8) CMOS flash EEPROM 120 ns 1000 cycles
The device class designator shall be a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style T See figure 1 32 "J" lead chip carrier U See figure 1 32 Flat pack X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z See figure 1 32 Gullwing lead chip carrier
The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Endurance: Device types 01-04 . . . . . . . . . . . . . . . . . . . . . . . 10000 cycles/byte, minimum Device types 05-08 . . . . . . . . . . . . . . . . . . . . . . . 1000 cycles/byte, minimum Supply voltage range (VCC) 2/ . . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Storage temperature range (Tstg) . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . +300°C Junction temperature (TJ) 3/ . . . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (ΘJC) (case outline X, Y) . . See MIL-STD-1835 Thermal resistance, junction-to-case (ΘJC) (case outlines T, Z) . 13°C/W Thermal resistance, junction-to-case (ΘJC) (case outline U) . . . 27°C/W Voltage on any pin with respect to ground 2/ . . . . . . . . . . . −2.0 V dc to +7.0 V dc Voltage on pin A9 with respect to ground 4/ . . . . . . . . . . . −2.0 V dc to +13.5 V dc VPP supply voltage with respect to ground 4/ . . . . . . . . . . . −2.0 V dc to +14.0 V dc VCC supply voltage with respect to ground 2/ . . . . . . . . . . . −2.0 V dc to +7.0 V dc Output short circuit current 5/ . . . . . . . . . . . . . . . . . 200 mA Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years minimum
Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Operating temperature range (Tcase) . . . . . . . . . . . . . . . −55°C to +125°C Low level input voltage range (VIL) . . . . . . . . . . . . . . . −0.5 V dc to +0.8 V dc High level input voltage range (VIH) . . . . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc High level input voltage range, CMOS (VIH) . . . . . . . . . . . . VCC −0.5 V dc to VCC +0.5 V dc Chip clear (VP) . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 V dc to 12.6 V dc
Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . xx percent 7/
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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