NPFC - MIL-PRF-19500/592
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC
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| Organization: | NPFC |
| Publication Date: | 21 June 1996 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
See figure 1 (TO-254AA), figure 2 for surface mount devices, and figure 3 for JANHC and JANKC (die) dimensions.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Primary electrical characteristics at TC = +25°C (unless otherwise specified).
Document History
March 11, 2021
TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels...
December 11, 2017
TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
April 17, 2013
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
June 2, 2010
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
February 26, 2009
Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, and 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
April 7, 2004
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
May 29, 2003
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
August 30, 2002
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC
A description is not available for this item.
July 8, 2000
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC
A description is not available for this item.
July 2, 1998
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC
A description is not available for this item.
MIL-PRF-19500/592
June 21, 1996
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
September 25, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 217228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
March 31, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
March 16, 1994
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
July 31, 1992
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, 2N7228U, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
January 30, 1991
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7224, 2N7225, 2N7227, 2N7228 JANTX, JANTXV, AND JANS
A description is not available for this item.