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NPFC - MIL-M-38510/211

MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 1 April 1987
Status: inactive
Page Count: 37
scope:

This specification covers the detail requirements for monolithic silicon PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).

The part number shall be in accordance with MIL-M-38510.

The device type shall be as follows:

Device type Circuit Access times (ns) 01 4096 words/8 bits per word PROM with tri-state 45 outputs 02 4096 words/8 bits per word PROM with tri-state 85 outputs

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C J D-3 (24-lead, ½" × 1 ¼"), dual-in-line package 3 C-4 (28-terminal, .450" × .450"), square chip carrier package

Supply voltage range - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - −0.5 V dc to +5.5 V dc Storage temperature range- - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - +300°C Thermal resistance, junction-to-case (θJC): 1/ Case J - - - - - - - - - - - - - - - - - - 40°C/W Case 3 - - - - - - - - - - - - - - - - - - 60°C/W Output voltage range - - - - - - - - - - - - −0.5 V dc to +VCC Output sink current- - - - - - - - - - - - - 100 mA Maximum power dissipation (PD) 2/- - - - - - 1.10 W Maximum junction temperature (TJ)- - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (VIH) - 2.0 V dc Maximum low-level input voltage (VIL)- - 0.8 V dc Normalized fanout (each output)- - - - - 8 mA 3/ Case operating temperature range - - - - −55°C To +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, 32,768 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
A description is not available for this item.
April 13, 2012
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as...
April 24, 2001
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/211
April 1, 1987
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as...

References

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