NPFC - MIL-M-38510/211
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
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| Organization: | NPFC |
| Publication Date: | 13 April 2012 |
| Status: | active |
| Page Count: | 33 |
scope:
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).
intended Use:
Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
March 3, 2022
Microcircuits, Digital, 32,768 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
A description is not available for this item.
MIL-M-38510/211
April 13, 2012
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as...
April 24, 2001
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
April 1, 1987
MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as...