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NPFC - MIL-M-38510/324

MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 15 October 1987
Status: inactive
Page Count: 35
scope:

This specification covers the detail requirements for monolithic silicon, TTL, low-power Schottky, octal bus buffer gates with three-state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 Inverting octal buffer gate (inverting control inputs) 02 Noninverting octal buffer gate (complementary control inputs) 03 Noninverting octal buffer gates (inverting control inputs) 04 Inverting octal buffer gate (inverting control inputs) 05 Noninverting octal buffer gates (inverting control inputs)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) R D-8 (20-lead, ¼" × 1 1/16"), dual-in-line package S F-9 (20-lead, ¼" × ½"), flat package 2 C-2 (20 terminal, .350" × .350"), square chip carrier package X C-2A (20 terminal, .350" × .350"), square chip carrier package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range- - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - −1.5 V at −18mA to +5.5 V Storage temperature range - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device type 01- - - - - - - - - - - - - 275 mW Device types 02 and 03- - - - - - - - - 297 mW Device type 04- - - - - - - - - - - - - 286 mW Device type 05- - - - - - - - - - - - - 302 mW Lead temperature (soldering, 10 seconds)- +300°C Thermal resistance, junction-to-case (OJC): Cases R, S, and X - - - - - - - - - - - See MIL-M-38510, appendix C Case 2- - - - - - - - - - - - - - - - - 60°C/W 2/ Junction temperature (TJ) 3/ - - - - - - +175°C

Low-level output current- - - - - - - - - 18 mA maximum High-level output current - - - - - - - - −12 mA maximum Supply voltage (VCC)- - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high-level input voltage (VIH)- - 2.0 V Maximum low-level input voltage (VIL) - - 0.7 V Case operating temperature range (TC) - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Octal Buffer Gates with Three State Outputs, Monolithic Silicon
A description is not available for this item.
April 3, 2013
Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Octal Buffer Gates with Three State Outputs, Monolithic Silicon
A description is not available for this item.
July 1, 2008
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, octal bus buffer gates with three state outputs. Two product assurance classes and a choice of case...
August 20, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, octal bus buffer gates with three state outputs. Two product assurance classes and a choice of case...
July 2, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
December 9, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/324
October 15, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, TTL, low-power Schottky, octal bus buffer gates with three-state outputs. Two product assurance classes and a choice of case...
May 31, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 27, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 16, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 23, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
January 4, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 13, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
April 28, 1980
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 10, 1979
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
May 30, 1979
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
January 12, 1979
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, OCTAL BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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