DLA - SMD-5962-91612
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 19 October 1994 |
| Status: | inactive |
| Page Count: | 27 |
Document History
February 22, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
July 2, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 1, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 29, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q, and M) and...
SMD-5962-91612
October 19, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.