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DLA - SMD-5962-91612 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 November 1995
Status: inactive
Page Count: 30
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q, and M) and space application (device class and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked device shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Data retention Access time 01 256K × 4 SRAM Yes 45 ns 02 256K × 4 SRAM No 45 ns 03 256K × 4 SRAM Yes 35 ns 04 256K × 4 SRAM No 35 ns 05 256K × 4 SRAM Yes 25 ns 06 256K × 4 SRAM No 25 ns 07 256K × 4 SRAM Yes 20 ns 08 256K × 4 SRAM No 20 ns 09 256K × 4 SRAM Yes 15 ns 10 256K × 4 SRAM No 15 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and Qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 28 dual-in-line Y See figure 1 28 SOJ package Z CDCC1-N28 28 dual leadless chip carrier U CDFP1-F32 32 flat pack T See figure 1 32 rectangular leadless chip carrier M See figure 1 32 SOJ pckage

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage range (VIN) - - - - - - - - - - - - −0.5 V dc to VCC+0.5 V dc 3/ DC output voltage range (VOUT) - - - - - - - - - - - −0.5 V dc to VCC+0.5 V dc 3/ Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - 15°C/W 4/ Cases Y and T - - - - - - - - - - - - - - - - - - - 18°C/W 4/ Cases Z and U - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Output voltage applied in high Z state - - - - - - - −0.5 V dc to VCC+0.5 V dc Maximum power dissipation, (PD) - - - - - - - - - - 1.0 W Maximum junction temperature (TJ) - - - - - - - - - +150°C 5/

Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Supply voltage range (VSS) - - - - - - - - - - - - 0.0 V dc High level input voltage range (VIH) - - - - - - - 2.2 V dc to VCC + 0.5 V dc Low level input voltage range (VIL) - - - - - - - −0.5 V dc to 0.8 V dc Case operating temperature range (TC - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - 6/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 22, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
July 2, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 1, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-91612 REV A
November 29, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q, and M) and...
October 19, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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