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DLA - SMD-5962-00536

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 19 September 2000
Status: inactive
Page Count: 29
scope:

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

December 5, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar...
April 8, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar...
June 1, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications...
September 24, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
April 11, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
March 29, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
December 8, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
October 22, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
January 15, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
December 11, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
SMD-5962-00536
September 19, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...

References

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