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DLA - SMD-5962-95801 REV B

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 7 May 2004
Status: inactive
Page Count: 20

Document History

February 24, 2021
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
July 28, 2014
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD-5962-95801 REV B
May 7, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON
A description is not available for this item.
June 12, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535...
October 31, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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