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DLA - SMD-5962-92094 REV B

MICROCIRCUIT, LINEAR, DUAL, CMOS, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 August 1997
Status: inactive
Page Count: 16
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 LMC662 Dual CMOS operational amplifier 02 LPC662 Dual low power CMOS operational amplifier 03 LMC6062 Dual micro power CMOS operational amplifier

The device class designator is a single letter identifying ft product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (V+ to V−) .................................. 16 V dc Differential input voltage.................................. V± Either input beyond V+ or V− ............................... 0.7 V dc Output short circuit to GND 2/.............................. Continuous Power dissipation (PD): Device type 01 .......................................... 95 mW Device type 02 .......................................... 13.5 mW Device type 03 .......................................... 1.052 mW Storage temperature range .................................. −65°C to +150°C Lead temperature (soldering, 10 seconds).................... +260°C Junction temperature (TJ) .................................. +150°C Thermal resistance, junction-to-case (ΘJC).................. See MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA) .............. +140°C/W

Supply voltage range (V+) .................................... +5 V dc to +15 V dc Supply voltage (V−)........................................... 0 V dc Ambient operating temperature range (TA) ..................... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 10, 2004
MICROCIRCUIT, LINEAR, DUAL, CMOS, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-92094 REV B
August 20, 1997
MICROCIRCUIT, LINEAR, DUAL, CMOS, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 23, 1993
MICROCIRCUIT, LINEAR, DUAL, CMOS, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and N) and...
October 7, 1992
MICROCIRCUIT, LINEAR, DUAL, CMOS, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.

References

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