scope:

This specification covers the detail requirements for monolithic silicon, DTL, positive logic NAND gating microcircuits. Three product assurance classes and a choice of case outline/lead finish are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

The device type shall be as follows:

Device type Circuit 01 Dual, 4-input expandable NAND gate 02 Extendable hex inverter 03 Hex inverter 04 Quadruple, 2-input positive NAND gate 05 Triple, 3-input positive NAND gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline, MIL-M-38510, appendix C A F-1 (14-lead, ¼" × ¼", flat-pack) B F-3 (14-lead, ⅛" × ¼", flat-pack) C D-1 (14-lead, ¼" × ¾", dual-in-line pack) D F-2 (14-lead, ¼" × ⅜", flat-pack)

Supply voltage range- - - - - - - - - - - −0 5 Vdc to 8.0 Vdc Input voltage range - - - - - - - - - - - −1.5 Vdc to 5.5 Vdc Storage temperature range - - - - - - - - −65°C to 150°C Maximum power dissipation, P_D - - - - - - 23 mWdc per gate Lead temperature (soldering 10 seconds) - 300°C Junction temperature- - - - - - - - - - - - T_J = 175°C

Supply voltage - - - - - - - - - - - - - - 4.5 Vdc minimum to 5.5 Vdc maximum Minimum high level input voltage - - - - - 1.9 Vdc @ 25°C Maximum low level input voltage- - - - - - 1.1 Vdc @ 25°C Normalized fanout (each output)- - - - - - 8 maximum Ambient operating temperature range- - - - −55°C to 125°C

intended Use:

Microcircuits conforming to this specification are intended for use for Government microcircuit applications (original equipment) and logistic purposes.