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NPFC - DESC-DWG-89102

SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED

inactive
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Organization: NPFC
Publication Date: 14 May 1990
Status: inactive
Page Count: 14

Document History

DSCC-DWG-89102 REV C CANC
May 6, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.
DSCC-DWG-89102 REV B
May 27, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.
DESC-DWG-89102
January 16, 1991
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
This drawing describes the detail requirements for a hermetic, silicon, Schottky barrier semiconductor diode intended for use as a power rectifier. The complete part number shall be as shown in the...
DESC-DWG-89102
May 14, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.

References

Refer to:
MIL-PRF-19500/586 - SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817−1, 1N5819−1, AND 1N6761−1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Published by NPFC on February 17, 2021
Scope. This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated...
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