DLA - DSCC-DWG-89102 REV C CANC
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
inactive, Most Current
| Organization: | DLA |
| Publication Date: | 6 May 2003 |
| Status: | inactive |
| Page Count: | 1 |
Document History
DSCC-DWG-89102 REV C CANC
May 6, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.
May 27, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.
January 16, 1991
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
This drawing describes the detail requirements for a hermetic, silicon, Schottky barrier semiconductor diode intended for use as a power rectifier.
The complete part number shall be as shown in the...
May 14, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.