DOD - DESC-DWG-89102
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
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| Organization: | DOD |
| Publication Date: | 16 January 1991 |
| Status: | inactive |
| Page Count: | 14 |
scope:
This drawing describes the detail requirements for a hermetic, silicon, Schottky barrier semiconductor diode intended for use as a power rectifier.
The complete part number shall be as shown in the following example:
Device type JEDEC number Figure number 89102-1N5819 TX, TXV 1N5819 See figure 1, DO-41 89102-1N5819UR TX, TXV 1N5819UR See figure 2, DO-213AB
Primary electrical characteristics at TA = +25°C unless otherwise specified.
intended Use:
Devices conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for OEM... View More
Document History
May 6, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.
May 27, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.
DESC-DWG-89102
January 16, 1991
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
This drawing describes the detail requirements for a hermetic, silicon, Schottky barrier semiconductor diode intended for use as a power rectifier.
The complete part number shall be as shown in the...
May 14, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER 1N5819, 1N5819UR, HERMETICALLY SEALED
A description is not available for this item.