scope:

This specification covers the detail requirements for 1 Watt, silicon, voltage regulator diodes with voltage tolerances of 5 percent (2 percent and 1 percent tolerance options are available on the -1 suffix devices and JANHC). Three levels of product assurance are provided for each device type as specified in MIL-S-19500. One level of product assurance is provided for die.

See figures 1 (DO-13), 2 (similar to DO-41), 3 and 4 (JANHC).

Maximum ratings are as shown in columns 8 and 10 of table IV herein and as follows:

P_T = 1.0 W (DO-13 and DO-41) at T_L = 95°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I_z to 0.0 mA dc at T_L = +175°C).

P_T = 1.0 W(DO-213AB) at T_EC = 125°C. (Derate to 0 at T_EC = 175°C).

−65°C ≤ T_op ≤ +175°C; −65°C ≤ T_STG ≤ +175°C.

Primary electrical characteristic columns 2, 9, 12, and 15 of table IV herein and as follows:

3.3 V dc ≤ V_z ≤ 200 V dc

1N3821D-1 through 1N3828D-1 and 1N3016D-1 through 1N3051D-1 are 1 percent voltage tolerance.

1N3821C-1 through IN3828C-1 and 1N3016C-1 through 1N3051C-1 are 2 percent voltage tolerance.

1N3821A through 1N3828A and 1N3016B through 1N3051B are 5 percent voltage tolerance.

1N3821A-1 through 1N3828A-1 and 1N3016B-1 through 1N3051B-1 are 5 percent voltage tolerance.

R_θJL = 80°C/W (maximum) at L = .375 inch (9.53 mm) (DO-13 and DO-41).

R_θJEC = 50°C/W (maximum) junction to endcaps (DO-213AB). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.