scope:

This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.

See figures 1 (D0-13), 2 (D0-41), 3 (D0-213AB), 4, and 5 (JANHC).

Maximum ratings are as shown in columns 8 and 10 of table IV herein and as follows:

P_T = 1.0 W (D0-13 and D0-41) at T_L = +95°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I_Z to 0.0 mA dc at T_L = +175°C).

P_T = 1 W (D0-213AB) at T_EC = +125°C. (Derate to 0 at T_EC = +175°C).

−55°C ≤ T_op ≤ +175°C; −55°C ≤ T_STG ≤ +175°C.

Primary electrical characteristic columns 2,9,12, and 15 of table IV herein and as follows:

3.3 V dc ≤ V_z ≤ 200 V dc.

A and B suffix devices are 5 percent voltage tolerance.

C suffix devices are 2 percent voltage tolerance.

D suffix devices are 1 percent voltage tolerance.

R_θJL = 80°C/W (maximum) at L = .375 inch (9.53 mm) (D0-13).

R_θJL = 50°C/W (maximum) at L = .375 inch (9.53 mm) (D0-41).

R_θJEC = 50°C/W (maximum) junction to endcaps (D0-213AB). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.