DLA - SMD-5962-99607 REV D
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 4 May 2001 |
| Status: | inactive |
| Page Count: | 36 |
Document History
October 15, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
Scope.
This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar...
August 1, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V), and for appropriate satellite and similar applications...
March 20, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V), and for appropriate satellite and similar applications...
August 13, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
December 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
December 8, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
A description is not available for this item.
March 18, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-99607 REV D
May 4, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
A description is not available for this item.
August 31, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
May 25, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
March 20, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
September 28, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...