DLA - SMD-5962-96785
MICROCIRCUIT, LINEAR, RADIATION HARDENED, HIGH SPEED, LOW POWER OUTPUT LIMITING, CLOSED-LOOP BUFFER AMPLIFIER, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 27 February 1996 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN is as shown in the following example:
Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) identify the circuit function as follows:
Device type Generic number Circuit function 01 HS-1115RH Radiation hardened, DI, high speed, low power output limiting, closed-loop- buffer amplifier
The device class designator is a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535
The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style P GDIP1-T8 8 Dual-in-line
The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.
Voltage between V+ and V− . . . . . . . . . . . . . . . . . . . . . 12 V Voltage at either input terminal . . . . . . . . . . . . . . . . . V+ to V− Output current . . . . . . . . . . . . . . . . . . . . . . . . . . short circuit protected 2/ Output current (50% duty cycle) . . . . . . . . . . . . . . . . . . 60 mA 2/ Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . +175°C Storage temperature range (TSTG). . . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds). . . . . . . . . . . . . . +300°C Thermal resistance, junction-to-case (θJC). . . . . . . . . . . . . 30°C/W Thermal resistance, junction-to-ambient (θJA) . . . . . . . . . . . 115°C/W Maximum package power dissipation at TA = +125°C (PD). . . . . . . . 0.45 W 3/
Operating supply voltage (±VS) . . . . . . . . . . . . . . . . . . . ±5 V Load resistance (RL) . . . . . . . . . . . . . . . . . . . . . . . . ≥50 Ω Ambient operating temperature range (TA) . . . . . . . . . . . . . . −55°C to +125°C Radiation features: Neutron . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/ Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 Krads (SI) Latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . None 5/
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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