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DLA - SMD-5962-95625

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 8 December 1995
Status: inactive
Page Count: 36
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high reliability (device classes M and Q), and non-traditional military (device class M) with a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices." For device class N, the user is cautioned to assure that the device is appropriate for the application environment. When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes N, Q, and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Operating temp. Device type Generic number 1/ Circuit function 2/ Access time Endurance range 01 28F016 16 MEG CMOS FLASH EEPROM 85 ns 100,000 cycles −55°C to +125°C 02 28F016 16 MEG CMOS FLASH EEPROM 100 ns 100,000 cycles −55°C to +125°C 03 28F016 16 MEG CMOS FLASH EEPROM 85 ns 100,000 cycles −40°C to +125°C 04 28F016 16 MEG CMOS FLASH EEPROM 100 ns 100,000 cycles −40°C to +125°C

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 N Certification and qualification to MIL-I-38535 with a non-traditional performance environment 3/ Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 56 plastic shrink small-outline package

The Lead finish shall be as specified in MIL-I-38535 for device classes N, Q, and V. Finish Letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) 5/ . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Storage temperature range (Tstg) . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation . . . . . . . . . . . . . . . . . . . . 1.0 w Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . +300°C Junction temperature (TJ) 6/ . . . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (ΘJC) (case outline X) . . . 20°C/W Voltage on any pin with respect to ground 5/ . . . . . . . . . . −2.0 V dc to +7.0 V dc Vpp supply voltage with respect to ground 5/ 7/. . . . . . . . . −0.2 V dc to +14.0 V dc Output short circuit current 8/. . . . . . . . . . . . . . . . . 100 mA Data retention. . . . . . . . . . . . . . . . . . . . . . . . . . 10 years, minimum Endurance (All device types). . . . . . . . . . . . . . . . . . . 100,000 cycles/byte, minimum

Supply voltage range (VCC). . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Alternate supply voltage range (VCC). . . . . . . . . . . . . . . +3.15 V dc to +3.45 V dc Device type 01 and 02 operating temperature range (Tcase) . . . . −55°C to +125°C Device type 03 and 04 operating temperature range (Tcase) . . . . −40°C to +125°C Low level input voltage range (VIL) . . . . . . . . . . . . . . . −0.5 V dc to +0.8 V dc High level input voltage range (VIH). . . . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc High level input voltage range, CMOS (VIH). . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc VPP supply voltage with respect to ground . . . . . . . . . . . . 11.4 V dc to 12.6 V dc

Fault coverage measurement of manufacturing Logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . 99 percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

January 24, 2024
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class N) and space application (device class V). A choice of case outlines and lead finishes...
June 14, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of non-traditional (device class N), high reliability (device class Q), and space application (device class V). A choice of case...
August 23, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-95625
December 8, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high...

References

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