DOD - SMD 5962-95625
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 14 June 2013 |
| Status: | active |
| Page Count: | 36 |
scope:
This drawing documents three product assurance class levels consisting of non-traditional (device class N), high reliability (device class Q), and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
January 24, 2024
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class N) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-95625
June 14, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of non-traditional (device class N), high reliability (device class Q), and space application (device class V). A choice of case...
August 23, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
A description is not available for this item.
December 8, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high...