NPFC - MIL-PRF-19500/630
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D, R, AND F AND JANS M, D, R, AND F
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| Organization: | NPFC |
| Publication Date: | 2 May 1997 |
| Status: | inactive |
| Page Count: | 18 |
scope:
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS).
See figure 1 (TO-205AF).
Unless otherwise specified, TC = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, TC=+25°C.
Document History
October 9, 2018
TRANSISTOR , FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
November 3, 2016
Semiconductor Device, Field Effect, Radiation Hardened Transistor, P-Channel, Silicon, Types 2N7389, 2N7390, 2N7389U, 2N7389U5, and 2N7390U, 2N7390U5, JANTXV, R, and F and JANS, R, and F
A description is not available for this item.
January 27, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
December 19, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
March 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
November 7, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
A description is not available for this item.
December 22, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
MIL-PRF-19500/630
May 2, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
November 8, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV, M, D AND R AND JANS M, D AND R
A description is not available for this item.
May 10, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D AND R AND JANS M, D AND R
This specification covers the detail requirements for a P-channel, Radiation Hardened, enhancement mode. MOSFET, power transistor intended for use in high density power switching applications. Two...