NPFC - MIL-PRF-19500/630
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
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| Organization: | NPFC |
| Publication Date: | 22 December 1997 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS).
See figure 1 (T0-205AF) and figure 3 (LCC).
Unless otherwise specified, TC=+25° C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, TC = +25° C.
Document History
October 9, 2018
TRANSISTOR , FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
November 3, 2016
Semiconductor Device, Field Effect, Radiation Hardened Transistor, P-Channel, Silicon, Types 2N7389, 2N7390, 2N7389U, 2N7389U5, and 2N7390U, 2N7390U5, JANTXV, R, and F and JANS, R, and F
A description is not available for this item.
January 27, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
December 19, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
March 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
November 7, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
A description is not available for this item.
MIL-PRF-19500/630
December 22, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
May 2, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
November 8, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV, M, D AND R AND JANS M, D AND R
A description is not available for this item.
May 10, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D AND R AND JANS M, D AND R
This specification covers the detail requirements for a P-channel, Radiation Hardened, enhancement mode. MOSFET, power transistor intended for use in high density power switching applications. Two...