scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 ACS08 Radiation hardened SOS, advanced CMOS, quad 2-input AND gate 02 ACS08-02 1/ Radiation hardened SOS, advanced CMOS, quad 2-input AND gate

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 dual-in-line package X CDFP3-F14 14 flat package

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (V_CC)............................................ −0.5 V dc to +7.0 V dc DC input voltage range (V_IN).......................................... −0.5 V dc to V_CC + 0.5 V dc DC output voltage range (V_OUT)........................................ −0.5 V dc to V_CC + 0.5 V dc DC input current, any one input (I_IN)................................. ±10 mA DC output current, any one output (I_OUT).............................. ±50 mA Storage temperature range (T_STG)...................................... −65°C to +150°C Lead temperature (soldering, 10 seconds).............................. +265°C Thermal resistance, junction-to-case (θ_JC): Case outline C....................................................... 24°C/W Case outline X....................................................... 30°C/W Thermal resistance, junction-to-ambient (θ_JA): Case outline C....................................................... 74°C/W Case outline X....................................................... 116°C/w Junction temperature (T_J)............................................. +175°C Maximum package power dissipation at T_A = +125°C (P_D): 4/ Case outline C....................................................... 0.68 W Case outline X....................................................... 0.43 W

Supply voltage range (V_CC)............................................ +4.5 V dc to +5.5 V dc Input voltage range (V_IN)............................................. +0.0 V dc to V_CC Output voltage range (V_OUT)........................................... +0.0 V dc to V_CC Maximum low level input voltage (V_IL)................................. 30% of V_CC Minimum high level input voltage (V_IH)................................ 70% of V_CC Case operating temperature range (T_C)................................. −55°C to +125°C Maximum input rise and fall time at V_CC = 4.5 V (t_r, t_f).............. 10 ns/V Radiation features: Total dose........................................................... > 3 × 10⁵ Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4)............... > 100 MeV/(cm²/mg) 5/ Dose rate upset (20 ns pulse)........................................ > 1 × 10¹¹ Rads (Si)/s 5/ Latch-up............................................................. None 5/ Dose rate survivability.............................................. > 1 × 10¹² Rads (Si)/s 5/

intended Use: