scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device types shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 65647RH 8K × 8 Radiation hardened CMOS/SOS SRAM 50 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non- JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38635

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y CDFP3-F28 28 Flat pack

The lead finish is as specified in MIL-PRF-38635 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range .................................... −0.5 V to +7.0 V dc Input, output, or I/O voltage ........................... −0.3 V dc to V_DD +0.3 V dc Maximum package power dissipation (P_D) at T_A = +125°C Case X ................................................ 1.11 W 3/ Case Y ................................................ 0.94 W 3/ Lead temperature (soldering, 10 seconds maximum) ........ +300°C Thermal resistance, junction-to-case (Θ_JC): Case X ................................................ 8.0°C/W Case Y ................................................ 7.4°C/W Thermal resistance, junction-to-amibient (Θ_JA) Case X ................................................ 45.0°C/W Case Y ................................................ 53.4°C/W Junction temperature (T_J) ............................... +175°C Storage temperature range ............................... −65°C to +150°C

Supply voltage (V_DD) .................................... +4.5 V dc to +5.5 V dc Ground voltage (GND) .................................... 0.0 V dc Input high voltage (V_IH) ................................ 0.8V_DD to V_DD Input Low voltage (V_IL) ................................. 0.0 V dc to 0.2V_DD Case operating temperature range (T_C) ................... −55°C to +125°C Input rise and fall time ................................ 40 ns max Radiation features: Total dose irradiation ................................ ≥ 300 KRads(Si) Dose rate upset (20 ns pulse) ......................... ≥ 1 × 10¹¹ Rads(Si)/sec 4/ Dose rate survivability ............................... ≥ 1 × 10¹² Rads(Si)/sec 4/ Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets ....................... ≥ 100 MeV/(cm²/mg) 4/ Latchup ............................................... None 4/ Cosmic ray upset immunity ............................. > 1 × 10⁻¹⁰ errors/bit-day 4/ 5/

intended Use: