UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-94572

MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 1 March 1994
Status: inactive
Page Count: 12
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 AD600 Dual, low noise, 35 MHz variable gain amplifier 02 AD602 Dual, low noise, 35 MHz variable gain amplifier 03 AD603 Single, low noise, 90 MHz variable gain amplifier

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line P GDIP1-T8 or CDIP2-T8 8 Dual-in-line

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Total supply voltage (±VS) . . . . . . . . . . . . . . . ±7.5 V Input voltages: C1LO, C2LO, C2HI, and C2HI pins . . . . . . . . . . . ±VS A1HI, A1LO, A2LO, and A2HI pins . . . . . . . . . . . ±2 V continuous; ±VS for 10 ms GAT1 and GAT2 pins . . . . . . . . . . . . . . . . . . ±VS Internal power dissipation (PD): Case E . . . . . . . . . . . . . . . . . . . . . . . 600 mW Case P . . . . . . . . . . . . . . . . . . . . . . . 400 mW Transistor count: Device types 01 and 02 . . . . . . . . . . . . . . . 415 BJT Device type 03 . . . . . . . . . . . . . . . . . . . 100 BJT Storage temperature range . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature range (soldering 60 seconds) . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . See MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA): Case E . . . . . . . . . . . . . . . . . . . . . . . 120°C/W Case P . . . . . . . . . . . . . . . . . . . . . . . 140°C/W

Ambient operating temperature range (TA) . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

July 27, 2022
MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
October 19, 2015
MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 10, 2009
MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 11, 2002
MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-94572
March 1, 1994
MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
Advertisement