NPFC - MIL-S-19500/555
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6788, 2N6790, 2N6792 AND 2N6794 JANTX, JANTXV, JANS, AND JANC
| Organization: | NPFC |
| Publication Date: | 16 August 1993 |
| Status: | inactive |
| Page Count: | 28 |
scope:
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. See 6.5 for JAN level.
See figure 1 (TO-205AF). See figures 2, 3, 4, 5, and 6.6 for JANC (die) dimensions.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Approvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History