DLA - MIL-S-19500/555F
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6788, 2N6790, 2N6792, AND 2N6794 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
| Organization: | DLA |
| Publication Date: | 31 March 1995 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type.
See figure 1 (TO-205AF). See 6.6 and figures 2, 3, 4, and 5 for JANHC and JANKC (die) dimensions.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Approvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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