DLA - SMD-5962-93189 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 18 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 11 January 1995 |
| Status: | inactive |
| Page Count: | 36 |
Document History
April 4, 2023
MICROCIRCUIT, MEMORY, CMOS, 4K X 18 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
March 25, 2013
MICROCIRCUIT, MEMORY, CMOS, 4K X 18 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 2, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 18 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-93189 REV B
January 11, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 18 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
A description is not available for this item.
August 31, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 18 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
June 15, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 18 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...